2SD2232 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2232 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High DC Current Gain : hFE= 3000(Min) @ IC= 5A, VCE= 2V. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SD2232
Manufacturer: INCHANGE
File Size: 183.14 KB
Datasheet: 2SD2232-INCHANGE.pdf
Description: NPN Transistor

Applications

* Igniter applications
* High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collecto

2SD2232 Distributors

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2SD2232 NPN Transistor INCHANGE

INCHANGE 2SD2232-like datasheet