Datasheet Details
- Part number
- 2SD2232
- Manufacturer
- INCHANGE
- File Size
- 183.14 KB
- Datasheet
- 2SD2232-INCHANGE.pdf
- Description
- NPN Transistor
2SD2232 Description
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2232 .
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min).
High DC Current Gain
: hFE= 3000(Min) @ IC= 5A, VCE= 2V.
Minimum Lot-to-.
2SD2232 Applications
* Igniter applications
* High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collecto
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