Datasheet4U Logo Datasheet4U.com

2SD2236 - Power Transistor

2SD2236 Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min. Wide Area of Safe Operation. Complement to Type 2SB1477 APPLICATIONS. Des.

2SD2236 Applications

* Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 100 V 100 V 5 V 5 A 60 W UNIT n c . i m e IC Collector Current-Continuo

📥 Download Datasheet

Preview of 2SD2236 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SD2230 - NPN Transistor (NEC)
  • 2SD2232 - NPN Transistor (INCHANGE)
  • 2SD220 - NPN Transistor (Sanken)
  • 2SD2200 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2201 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2202 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2203 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2204 - NPN Transistor (Toshiba Semiconductor)

📌 All Tags

Inchange Semiconductor 2SD2236-like datasheet