2SD2236 Power Transistor

Inchange Semiconductor

Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min. Wide Area of Safe Operation. Complement to Type 2SB1477 APPLICATIONS. Des.

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Datasheet Specifications

Part number: 2SD2236
Manufacturer: Inchange Semiconductor
File Size: 249.30 KB
Datasheet: 2SD2236_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 100 V 100 V 5 V 5 A 60 W UNIT n c . i m e IC Collector Current-Continuo

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2SD2236 Power Transistor Inchange Semiconductor

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