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2SD2230 NPN Transistor

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Description

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Datasheet Specifications

Part number
2SD2230
Manufacturer
NEC
File Size
148.28 KB
Datasheet
2SD2230_NEC.pdf
Description
NPN Transistor

Features

* Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA
* High hFE and high current QUALITY GRADES
* Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corpor

Applications

* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ID(DC) PT Tj Tstg Ratings 16 16 5 500 200 150
* 55 to +

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