Datasheet Details
- Part number
- 2SD2161
- Manufacturer
- NEC
- File Size
- 163.58 KB
- Datasheet
- 2SD2161_NEC.pdf
- Description
- NPN Transistor
2SD2161 Description
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
2SD2161 Features
* High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)
* Full mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base vol
2SD2161 Applications
* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v
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