2SD2165 NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 i.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: 2SD2165
Manufacturer: NEC
File Size: 154.54 KB
Datasheet: 2SD2165_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* a small resin-molded insulation package, thus contributing to high-density mounting and mounting cost reduction. FEATURES
* High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
* Mold package that does not require an in

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2SD2165 NPN SILICON EPITAXIAL TRANSISTOR NEC

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