2SD2161 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A). Low Collector Satu.

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Datasheet Specifications

Part number: 2SD2161
Manufacturer: Inchange Semiconductor
File Size: 200.47 KB
Datasheet: 2SD2161-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low-frequency power amplifiers and low- speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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2SD2161 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2161-like datasheet