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2SD2161 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

2SD2161 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) *Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL.

2SD2161 Datasheet (200.47 KB)

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Datasheet Details

Part number:

2SD2161

Manufacturer:

Inchange Semiconductor

File Size:

200.47 KB

Description:

Silicon npn power transistor.

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2SD2161 Silicon NPN Power Transistor Inchange Semiconductor

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