2SD2161 Datasheet - Inchange Semiconductor

2SD2161, Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A). Low Collector Satu.

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Datasheet Details

Part number:

2SD2161

Manufacturer:

Inchange Semiconductor

File Size:

200.47 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for low-frequency power amplifiers and low- speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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2SD2161 Silicon NPN Power Transistor Inchange Semiconductor

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