Datasheet4U Logo Datasheet4U.com

2SD2161 Datasheet - Inchange Semiconductor

2SD2161 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) *Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL.

2SD2161-InchangeSemiconductor.pdf

Preview of 2SD2161 PDF
2SD2161 Datasheet Preview Page 2

Datasheet Details

Part number:

2SD2161

Manufacturer:

Inchange Semiconductor

File Size:

200.47 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

2SD2161 NPN Transistor (NEC)

2SD2162 NPN Transistor (Renesas)

2SD2162 NPN Transistor (INCHANGE)

2SD2163 NPN Transistor (NEC)

2SD2163 NPN Transistor (INCHANGE)

2SD2164 NPN Silicon Epitaxial Transistor (NEC)

2SD2165 NPN Transistor (NEC)

2SD2165 Silicon NPN Power Transistor (Inchange Semiconductor)

TAGS

2SD2161 2SD2161 Silicon NPN Power Transistor Inchange Semiconductor

2SD2161 Distributor