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2SD2163 NPN Transistor

2SD2163 Description

DATA SHEET DARLINGTON POWER TRANSISTOR www.DataSheet4U.com 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SD2163 Features

* Mold package that does not require an insulating board or insulation bushing
* High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A)
* Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parame

2SD2163 Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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Datasheet Details

Part number
2SD2163
Manufacturer
NEC
File Size
130.22 KB
Datasheet
2SD2163_NEC.pdf
Description
NPN Transistor

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NPN Transistor NEC
NEC 2SD2163-like datasheet