2SD2163 Datasheet - NEC

2SD2163 NPN Transistor

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

2SD2163 Features

* Mold package that does not require an insulating board or insulation bushing

* High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A)

* Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parame

2SD2163_NEC.pdf