2SD2162
INCHANGE
224.94kb
Npn transistor. *High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A) *Low Collector Saturation Voltage- : VCE(sat) ≤1.5V @
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2SD2161 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 2000.
2SD2161 - NPN Transistor
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
..
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
2SD2162 - NPN Transistor
(Renesas)
DATA SHEET
SILICON POWER TRANSISTOR
2SD2162
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED .
2SD2163 - NPN Transistor
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
..
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER.
2SD2163 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2163
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 10A ·Collector.
2SD2164 - NPN Silicon Epitaxial Transistor
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164.
2SD2165 - NPN Transistor
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
..
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED S.
2SD2165 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation V.
2SD2166 - Transistor
(Rohm)
Transistors
Low VCE(sat) Transistor(Strobe flash)
2SD2098 / 2SD2118 / 2SD2097 / 2SD2166
FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB =.
2SD2166 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SD2166
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
,, 2SB1436 。 .
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