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2SD2162 NPN Transistor

2SD2162 Description

isc Silicon NPN Darlington Power Transistor .
High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2. Low Collector Saturation Voltage- : VCE(sat) ≤1.

2SD2162 Applications

* Designed for low-frequency power amplifiers and low- speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SD2162
Manufacturer
INCHANGE
File Size
224.94 KB
Datasheet
2SD2162-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2162-like datasheet