Datasheet4U Logo Datasheet4U.com

2SD2165 Silicon NPN Power Transistor

2SD2165 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A). Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA).

2SD2165 Applications

* Designed for use low frequency amplifilier and low switching speed applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

📥 Download Datasheet

Preview of 2SD2165 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2165
Manufacturer
Inchange Semiconductor
File Size
200.23 KB
Datasheet
2SD2165-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 2SD2162 - NPN Transistor (Renesas)
  • 2SD2163 - NPN Transistor (NEC)
  • 2SD2164 - NPN Silicon Epitaxial Transistor (NEC)
  • 2SD2166 - Transistor (Rohm)
  • 2SD2167 - Power Transistor (ROHM)
  • 2SD2100 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD2101 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2103 - Silicon NPN Transistor (Hitachi Semiconductor)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD2165-like datasheet