2SD2165 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A). Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA).

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Datasheet Specifications

Part number: 2SD2165
Manufacturer: Inchange Semiconductor
File Size: 200.23 KB
Datasheet: 2SD2165-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use low frequency amplifilier and low switching speed applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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2SD2165 Silicon NPN Power Transistor Inchange Semiconductor

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