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2SD2163 NPN Transistor

2SD2163 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2163 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 10A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Minimum Lot-to-Lot varia.

2SD2163 Applications

* Be ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers of PC terminals. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren

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Datasheet Details

Part number
2SD2163
Manufacturer
INCHANGE
File Size
217.54 KB
Datasheet
2SD2163-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2163-like datasheet