Datasheet Details
- Part number
- 2SD2250
- Manufacturer
- INCHANGE
- File Size
- 205.04 KB
- Datasheet
- 2SD2250-INCHANGE.pdf
- Description
- Silicon NPN Darlington Power Transistor
2SD2250 Description
isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min).
High DC Current Gain-
: hFE= 5000( Min.
Low Collector Sa.
2SD2250 Applications
* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Po
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