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2SD2250 - Silicon NPN Darlington Power Transistor

2SD2250 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector Sa.

2SD2250 Applications

* Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Po

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Datasheet Details

Part number
2SD2250
Manufacturer
INCHANGE
File Size
205.04 KB
Datasheet
2SD2250-INCHANGE.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor INCHANGE
INCHANGE 2SD2250-like datasheet