2SD2250 Datasheet - INCHANGE

2SD2250 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) *Complement to Type 2SB1490 *Minimum Lot-to-Lot variations for robust device perfor.

2SD2250 Datasheet (205.04 KB)

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Datasheet Details

Part number:

2SD2250

Manufacturer:

INCHANGE

File Size:

205.04 KB

Description:

Silicon npn darlington power transistor.

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