2SD2256 Silicon NPN Darlington Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 .
High DC Current Gain : hFE= 2000(Min. High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS. D.

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Datasheet Specifications

Part number: 2SD2256
Manufacturer: INCHANGE
File Size: 71.94 KB
Datasheet: 2SD2256-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Curren

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2SD2256 Silicon NPN Darlington Power Transistor INCHANGE

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