Datasheet Details
- Part number
- 2SD2256
- Manufacturer
- INCHANGE
- File Size
- 71.94 KB
- Datasheet
- 2SD2256-INCHANGE.pdf
- Description
- Silicon NPN Darlington Power Transistor
2SD2256 Description
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 .
High DC Current Gain : hFE= 2000(Min.
High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min)
APPLICATIONS.
D.
2SD2256 Applications
* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Curren
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