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2SD2256 Datasheet - INCHANGE

2SD2256 Silicon NPN Darlington Power Transistor

*High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V *High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1.

2SD2256-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2256

Manufacturer:

INCHANGE

File Size:

71.94 KB

Description:

Silicon npn darlington power transistor.

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2SD2256 2SD2256 Silicon NPN Darlington Power Transistor INCHANGE