Datasheet4U Logo Datasheet4U.com

2SD2400 NPN Transistor

2SD2400 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Wide Area of Safe Operation. Complement to Type 2SB1569. Minimum Lot-to-.

2SD2400 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM Collector C

📥 Download Datasheet

Preview of 2SD2400 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2400
Manufacturer
INCHANGE
File Size
194.70 KB
Datasheet
2SD2400-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2400A - Power Transistor (Rohm)
  • 2SD2401 - Silicon NPN Transistor (Sanken electric)
  • 2SD2402 - NPN SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SD2403 - NPN Transistor (Renesas)
  • 2SD2406 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2407 - NPN Transistor (Panasonic)
  • 2SD2413 - GENERAL PURPOSE TRANSISTOR (HOTTECH)
  • 2SD2414 - Silicon NPN Transistor (Toshiba Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2400-like datasheet