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2SD2414 Datasheet - Toshiba Semiconductor

2SD2414 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO.

2SD2414 Datasheet (117.70 KB)

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Datasheet Details

Part number:

2SD2414

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

117.70 KB

Description:

Silicon npn transistor.

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2SD2414 Silicon NPN Transistor Toshiba Semiconductor

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