2SD2449 Datasheet - Toshiba Semiconductor

2SD2449 Silicon NPN Transistor

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2449 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg.

2SD2449_ToshibaSemiconductor.pdf