2SD2406 Datasheet - Toshiba Semiconductor

2SD2406 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications 2SD2406 Unit: mm High power dissipation: PC = 25 W (Tc = 25°C) Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC 80 V 80 V 5V 4A 0.4 A 25 W Junction temperature Storage tempe.

2SD2406_ToshibaSemiconductor.pdf