Datasheet4U Logo Datasheet4U.com

2SD2462 Datasheet - Toshiba Semiconductor

2SD2462 NPN Transistor

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temper.

2SD2462_ToshibaSemiconductor.pdf

Preview of 2SD2462 PDF
2SD2462 Datasheet Preview Page 2 2SD2462 Datasheet Preview Page 3

Datasheet Details

Part number:

2SD2462

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.11 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD2460 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2461 Silicon NPN Transistor (Toshiba Semiconductor)

2SD2465 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2466 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2466A Silicon NPN Transistor (Panasonic Semiconductor)

2SD2467 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2468 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2469 Silicon NPN Transistor (Panasonic Semiconductor)

TAGS

2SD2462 2SD2462 NPN Transistor Toshiba Semiconductor

2SD2462 Distributor