2SD2462 Datasheet - Toshiba Semiconductor

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temper