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2SD2460 - Silicon NPN Transistor

Features

  • q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 20 20 15 1.5 0.7 300 150.
  • 55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC.
  • 72 New S Type Package s Electrical Characteristics Par.

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Datasheet Details

Part number 2SD2460
Manufacturer Panasonic Semiconductor
File Size 34.28 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2460 Datasheet
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Full PDF Text Transcription

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Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 4.0±0.2 s Features q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 20 20 15 1.5 0.7 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.
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