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2SD2462
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2462
Power Amplifier Applications
Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 60 7 3 6 0.6 1.3 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA
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TOSHIBA 2-8M1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.55 g (typ.
2SD2462 Datasheet
