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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
2SD2440
Unit: mm
· High breakdown voltage: VCBO = 100 V : VEBO = 18 V
· Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) · High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) · High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
100 60 18 6 12 2
40
150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.
2SD2440 Datasheet
