The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2461
Power Amplifier Applications
2SD2461
Unit: mm
· High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) · Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
Rating
60 60 7 2 4 0.4 1.3 150 −55 to 150
Unit V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.
2SD2461 Datasheet
