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2SD2480 Datasheet - Toshiba Semiconductor

Datasheet Details

Part number:

2SD2480

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

116.10 KB

Description:

Silicon NPN Transistor

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm * High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) * Low saturation voltage: VC

2SD2480_ToshibaSemiconductor.pdf

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2SD2480, Silicon NPN Transistor

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base cu

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