2SD2440 Datasheet - Toshiba Semiconductor

2SD2440 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application 2SD2440 Unit: mm High breakdown voltage: VCBO = 100 V : VEBO = 18 V Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current D.

2SD2440_ToshibaSemiconductor.pdf