2SD2461 Datasheet (Toshiba Semiconductor)

2SD2461, Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications 2SD2461 Unit: mm High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range