Datasheet4U Logo Datasheet4U.com

2SD2461 Datasheet - Toshiba Semiconductor

2SD2461 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications 2SD2461 Unit: mm High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range.

2SD2461_ToshibaSemiconductor.pdf

Preview of 2SD2461 PDF
2SD2461 Datasheet Preview Page 2 2SD2461 Datasheet Preview Page 3

Datasheet Details

Part number:

2SD2461

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

110.95 KB

Description:

Silicon npn transistor.

📁 Related Datasheet

2SD2460 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2462 NPN Transistor (Toshiba Semiconductor)

2SD2465 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2466 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2466A Silicon NPN Transistor (Panasonic Semiconductor)

2SD2467 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2468 Silicon NPN Transistor (Panasonic Semiconductor)

2SD2469 Silicon NPN Transistor (Panasonic Semiconductor)

TAGS

2SD2461 2SD2461 Silicon NPN Transistor Toshiba Semiconductor

2SD2461 Distributor