2SD2461 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications 2SD2461 Unit: mm * High DC current gain: hFE (1) = 800 .

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Datasheet Specifications

Part number: 2SD2461
Manufacturer: Toshiba ↗ Semiconductor
File Size: 110.95 KB
Datasheet: 2SD2461_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* 2SD2461 Unit: mm
* High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A)
* Low saturation voltage: VCE (sat) = 0.3 V (typ. ) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collecto

2SD2461 Distributors

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2SD2461 Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SD2461-like datasheet