2SD2490
INCHANGE
193.80kb
Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *High DC current gain : hFE= 1000(Min) @IC= 1A *Low Collector Saturation
📁 Related Datasheet
2SD2491 - Silicon NPN Transistor
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• Isolated package TO-126FM
Outline
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1
2.
2SD2492 - Silicon NPN Transistor
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• Isolated package TO-126FM
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·High DC Current Gain-
: hFE= 500.
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Equivalent circuit
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sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55.
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2SD2494 - NPN Transistor
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·High DC Current Gain-
: hFE= 500.
2SD2494 - Silicon NPN Transistor
(Sanken electric)
Equivalent circuit
C
Darlington
2SD2494
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=.
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(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
DESCRIPTION ·With TO-3PML package .. ·Complem.
2SD2495 - Silicon NPN Transistor
(Sanken electric)
Equivalent circuit
C
Darlington
2SD2495
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=.
2SD2495 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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2SD2495
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DESCRIPTION ·With TO-220F packa.
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