2SD2490 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *High DC current gain : hFE= 1000(Min) @IC= 1A *Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Audio ,r
