2SD2498
Toshiba ↗ Semiconductor
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Npn transistor.
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2SD2490 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2490
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·.
2SD2491 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
• Isolated package TO-126FM
Outline
TO-126FM
1
2.
2SD2492 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
• Isolated package TO-126FM
Outline
TO-126FM
1
2.
2SD2493 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·High DC Current Gain-
: hFE= 500.
2SD2493 - Silicon NPN Transistor
(Sanken electric)
Equivalent circuit
C
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55.
2SD2493 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2493
..
DESCRIPTION ·With TO-3PN packag.
2SD2494 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·High DC Current Gain-
: hFE= 500.
2SD2494 - Silicon NPN Transistor
(Sanken electric)
Equivalent circuit
C
Darlington
2SD2494
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=.
2SD2494 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
DESCRIPTION ·With TO-3PML package .. ·Complem.
2SD2495 - Silicon NPN Transistor
(Sanken electric)
Equivalent circuit
C
Darlington
2SD2495
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=.
