2SD2406 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Good Linearity of hFE. Mi.

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Datasheet Specifications

Part number: 2SD2406
Manufacturer: INCHANGE
File Size: 209.31 KB
Datasheet: 2SD2406-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

2SD2406 Distributors

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2SD2406 NPN Transistor INCHANGE

INCHANGE 2SD2406-like datasheet