Datasheet Details
- Part number
- 2SD2406
- Manufacturer
- INCHANGE
- File Size
- 209.31 KB
- Datasheet
- 2SD2406-INCHANGE.pdf
- Description
- NPN Transistor
2SD2406 Description
isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min).
Collector Power Dissipation-
: PC= 25W@ TC= 25℃.
Good Linearity of hFE.
Mi.
2SD2406 Applications
* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
C
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