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2SD288 NPN Transistor

2SD288 Description

isc Silicon NPN Power Transistor 2SD288 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min). Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃ APPLICATIONS. Designed f.

2SD288 Applications

* Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC

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Datasheet Details

Part number
2SD288
Manufacturer
INCHANGE
File Size
212.36 KB
Datasheet
2SD288-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD288-like datasheet