2SD289 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD289 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min). Collector Power Dissipation- : PC= 25W(Max)@ TC= 25℃. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SD289
Manufacturer: INCHANGE
File Size: 185.87 KB
Datasheet: 2SD289-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC

2SD289 Distributors

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2SD289 NPN Transistor INCHANGE

INCHANGE 2SD289-like datasheet