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2SD600 - NPN Transistor

2SD600 Description

isc Silicon NPN Power Transistor .
High Collector Current-IC= 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. Low Saturati.

2SD600 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse Col

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Datasheet Details

Part number
2SD600
Manufacturer
INCHANGE
File Size
210.24 KB
Datasheet
2SD600-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD600-like datasheet