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2SD727 NPN Transistor

2SD727 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD727 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2SB.

2SD727 Applications

* Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A

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Datasheet Details

Part number
2SD727
Manufacturer
INCHANGE
File Size
201.71 KB
Datasheet
2SD727-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD727-like datasheet