2SD950 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Low Collector Saturation Voltage- : VCE(sat)= 5. Built-in Damper Diode.

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Datasheet Specifications

Part number: 2SD950
Manufacturer: INCHANGE
File Size: 201.89 KB
Datasheet: 2SD950-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3 A IC

2SD950 Distributors

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2SD950 NPN Transistor INCHANGE

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