3DD7D NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Minim.

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Datasheet Specifications

Part number: 3DD7D
Manufacturer: INCHANGE
File Size: 198.09 KB
Datasheet: 3DD7D-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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3DD7D NPN Transistor INCHANGE

INCHANGE 3DD7D-like datasheet