Datasheet Details
| Part number | 3DD7D |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 198.09 KB |
| Description | NPN Transistor |
| Datasheet |
 3DD7D-INCHANGE.pdf
|
| Part number | 3DD7D |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 198.09 KB |
| Description | NPN Transistor |
| Datasheet |
3DD7D-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Ba
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