3DD7F Datasheet, Transistor, Inchange Semiconductor

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3DD7F

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Inchange Semiconductor

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185.57kb

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)

Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(M

3DD7F Application

• Applications
• Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

TAGS

3DD7F

Inchange Semiconductor

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