3DD7E Datasheet, Transistor, Inchange Semiconductor

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3DD7E

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📄 Datasheet

Description:

Silicon npn power transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A A

✔ 3DD7E Application

Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMU

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3DD7E Silicon NPN Power Transistor Inchange Semiconductor