3DD7E Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7E .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 3DD7E
Manufacturer: Inchange Semiconductor
File Size: 185.22 KB
Datasheet: 3DD7E-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continu

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3DD7E Silicon NPN Power Transistor Inchange Semiconductor

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