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3DD7G

Silicon NPN Power Transistor

3DD7G General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS
*Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

3DD7G Datasheet (185.84 KB)

Preview of 3DD7G PDF

Datasheet Details

Part number:

3DD7G

Manufacturer:

Inchange Semiconductor

File Size:

185.84 KB

Description:

Silicon npn power transistor.

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3DD7G Silicon NPN Power Transistor Inchange Semiconductor

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