3DD7G Datasheet, Transistor, Inchange Semiconductor

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3DD7G

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Inchange Semiconductor

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185.84kb

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📄 Datasheet

Description:

Silicon npn power transistor.

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
  • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(M

  • Datasheet Preview: 3DD7G 📥 Download PDF (185.84kb)
    Page 2 of 3DD7G

    3DD7G Application

    • Applications
    • Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    TAGS

    3DD7G
    Silicon
    NPN
    Power
    Transistor
    Inchange Semiconductor

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