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3DD7G - Silicon NPN Power Transistor

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Datasheet Details

Part number 3DD7G
Manufacturer Inchange Semiconductor
File Size 185.84 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 3DD7G-InchangeSemiconductor.pdf

3DD7G Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ

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