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3DD7A Silicon NPN Power Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7A .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number
3DD7A
Manufacturer
Inchange Semiconductor
File Size
185.15 KB
Datasheet
3DD7A-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuou

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Inchange Semiconductor 3DD7A-like datasheet