AOD2N100 Datasheet - INCHANGE

AOD2N100, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD2N100 *

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 2 1.2 7 PD Total Dissipation @TC=25℃ 83 Tch Max.
Operating Jun

AOD2N100-INCHANGE.pdf