AOT13N50 Datasheet - INCHANGE

AOT13N50, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOT13N50

Features

* Drain Current
* ID= 13A@ TC=25℃
* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.51Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
Operating Junction Temperat

AOT13N50-INCHANGE.pdf