Datasheet4U Logo Datasheet4U.com

BD246 PNP Transistor

BD246 Description

isc Silicon PNP Power Transistor BD246/A/B/C .
Collector Current -IC= -10A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(M.

BD246 Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD246 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD246A BD246B -70 -90 BD246C -115 BD246 -45 VCEO Collector-Emitter Voltage BD246A -60 BD2

📥 Download Datasheet

Preview of BD246 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD246
Manufacturer
INCHANGE
File Size
213.85 KB
Datasheet
BD246-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • BD246A - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
  • BD246B - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
  • BD246C - PNP SILICON POWER TRANSISTORS (Power Innovations Limited)
  • BD240 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BD2400U510-1366 - Ultra Low Profile 1336 Balun (Yantel)
  • BD2400U520-1365 - Ultra Low Profile 1365 Balun (Yantel)
  • BD240A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BD240B - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE BD246-like datasheet