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BD246C, BD246 PNP Transistor

BD246C Description

isc Silicon PNP Power Transistor BD246/A/B/C .
Collector Current -IC= -10A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(M.

BD246C Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD246 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD246A BD246B -70 -90 BD246C -115 BD246 -45 VCEO Collector-Emitter Voltage BD246A -60 BD2

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This datasheet PDF includes multiple part numbers: BD246C, BD246. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BD246C, BD246
Manufacturer
INCHANGE
File Size
213.85 KB
Datasheet
BD246-INCHANGE.pdf
Description
PNP Transistor
Note
This datasheet PDF includes multiple part numbers: BD246C, BD246.
Please refer to the document for exact specifications by model.

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PNP Transistor INCHANGE
INCHANGE BD246C-like datasheet