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BD683 NPN Transistor

BD683 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD683 .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 120V(Min. DC Current Gain. : hFE = 750(Min)@ IC= 1. Comple.

BD683 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-C

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Datasheet Details

Part number
BD683
Manufacturer
INCHANGE
File Size
204.36 KB
Datasheet
BD683-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD683-like datasheet