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BD683 - NPN Transistor

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Datasheet Details

Part number BD683
Manufacturer INCHANGE
File Size 204.36 KB
Description NPN Transistor
Datasheet download datasheet BD683-INCHANGE.pdf

BD683 Product details

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 120V(Min.) DC Current Gain : hFE = 750(Min)@ IC= 1.5A Complement to Type BD684 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Volt

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