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BD682 PNP Transistor

BD682 Description

isc Silicon PNP Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -100V. DC Current Gain. : hFE = 750(Min) @ IC= -1. Compleme.

BD682 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

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Datasheet Details

Part number
BD682
Manufacturer
INCHANGE
File Size
185.53 KB
Datasheet
BD682-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD682-like datasheet