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BD681 NPN Transistor

BD681 Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 100V. DC Current Gain. : hFE = 750(Min) @ IC= 1. Complement.

BD681 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-C

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Datasheet Details

Part number
BD681
Manufacturer
INCHANGE
File Size
184.91 KB
Datasheet
BD681-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD681-like datasheet