BD709 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD709 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min. Complement to Type BD710.

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Datasheet Specifications

Part number: BD709
Manufacturer: INCHANGE
File Size: 187.29 KB
Datasheet: BD709-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCES Collector-Emitter Voltage VBE= 0 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Colle

BD709 Distributors

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BD709 NPN Transistor INCHANGE

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