BD710 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor BD710 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min. Complement to Type BD709.

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Datasheet Specifications

Part number: BD710
Manufacturer: INCHANGE
File Size: 190.08 KB
Datasheet: BD710-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCES Collector-Emitter Voltage VBE= 0 -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC C

BD710 Distributors

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BD710 PNP Transistor INCHANGE

INCHANGE BD710-like datasheet