BFP196W - NPN Transistor

Datasheet Summary

Description

NF = 1.3 dB TYP.

High Gain ︱S21︱2 = 18dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and lin

INCHANGE

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Datasheet Details

Part number	BFP196W
Manufacturer	INCHANGE
File Size	216.43 KB
Description	NPN Transistor
Datasheet	BFP196W Datasheet
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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ·High Gain ︱S21︱2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BFP196W VALUE 20 12 2 100 700 150 -65~150 UNIT V V V mA mW ℃ ℃ isc website：www.iscsemi.

Published: Oct 22, 2020 |