FCH099N65S3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor FCH099N65S3 *.

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Datasheet Specifications

Part number: FCH099N65S3
Manufacturer: INCHANGE
File Size: 356.72 KB
Datasheet: FCH099N65S3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-247 packaging
* Drain Source Voltage- : VDSS ≥ 650V
* Static drain-source on-resistance: RDS(on) ≤ 99mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 30 A IDM Drain Current-Single Pulsed 75 A PD Total Dissipation 22

FCH099N65S3 Distributors

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FCH099N65S3 N-Channel MOSFET INCHANGE

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