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FDH3632 N-Channel MOSFET

FDH3632 Description

isc N-Channel MOSFET Transistor *.

FDH3632 Features

* With TO-247 packaging
* Drain Source Voltage- : VDSS ≥100V
* Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDH3632 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 310 W Tj Operating Junction Temperature

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Datasheet Details

Part number
FDH3632
Manufacturer
INCHANGE
File Size
356.32 KB
Datasheet
FDH3632-INCHANGE.pdf
Description
N-Channel MOSFET

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INCHANGE FDH3632-like datasheet