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FDH50N50 N-Channel MOSFET

FDH50N50 Description

isc N-Channel MOSFET Transistor *.

FDH50N50 Features

* With TO-247 packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDH50N50 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 192 PD Total Dissipation 625 Tj Operating Junction Temperature -55~

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Datasheet Details

Part number
FDH50N50
Manufacturer
INCHANGE
File Size
234.25 KB
Datasheet
FDH50N50-INCHANGE.pdf
Description
N-Channel MOSFET

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INCHANGE FDH50N50-like datasheet